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A common European dual-gate MOSFET often used in similar VHF applications.
Since the 3SK41 is an legacy component that is increasingly difficult to source for modern repairs or new designs, technicians frequently look toward alternative dual-gate MOSFETs. Popular UTSOURCE cross-reference options include:
: Used in mixing and switching circuits for electronic equipment. Power Management : High-speed switching in compact power supplies.
By feeding the local oscillator signal into Gate 2 and the incoming RF signal into Gate 1, the 3SK41 functions as an incredibly stable, low-distortion mixer. 3sk41 datasheet
An older RCA dual-gate MOSFET, though this is also becoming rare.
The provides critical technical specifications for an legacy N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . Originally manufactured by Japanese and global semiconductor pioneers including NEC, Hitachi, and Motorola , the 3SK41 was built in a TO-72 (CAN-4) metal package . It was engineering-optimized for high-frequency RF amplification, fast switching, and low noise figures in consumer and industrial communication tuners.
Before condemning a 3SK41, always verify the biasing voltages on the gates. A failed bias resistor can make a good transistor appear defective. Also, ensure that the tuning capacitor and other passive components in the front‑end are clean and functioning properly. A common European dual-gate MOSFET often used in
For detailed and accurate information, we recommend checking with:
The 3SK41 comes in a metal can package, often designated as TO-72 or CAN-4, which is crucial for radio frequency shielding and heat dissipation. Source (S) Gate 1 (G1) Gate 2 (G2)
While exact datasheet values can vary slightly by manufacturer (e.g., NEC, Hitachi, or Motorola), the standard parameters for this type of MOSFET include: Power Management : High-speed switching in compact power
Understanding the 3SK41 datasheet requires looking at its electrical ratings. Note that these are standard specifications, but minor variations might exist depending on the manufacturer (NEC vs. Hitachi). Approximate Value VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D 20mA - 30mA Power Dissipation PDcap P sub cap D Forward Transconductance yfsy sub f s end-sub 10mS - 20mS Noise Figure ~ 2dB - 4dB (@ 100MHz) 3. 3SK41 Pinout and Physical Configuration
Provides significant amplification in the RF stage to improve receiver sensitivity. Common Applications & Use Cases
Used in the front-end of VHF/UHF receivers to amplify weak antenna signals with minimal added thermal noise.